Hard film and hard film-coated tool

ABSTRACT

A hard film formed by an arc-discharge ion-plating method, having a composition comprising metal components represented by Al x Cr 1-x-y Si y , wherein x and y are respectively atomic ratios meeting 0.45≦x≦0.75, 0≦y≦0.35, and 0.5≦x+y&lt;1, and non-metal components represented by N 1-α-β-γ B α C β O γ , wherein α,β and γ are respectively atomic ratios meeting 0≦α≦0.15, 0≦β≦0.35, and 0.003≦γ≦0.25, the hard film having an NaCl-type crystal structure, with a half width of 2θ at an X-ray diffraction peak corresponding to a (111) face or a (200) face being 0.5–2.0°, and the hard film containing oxygen more in grain boundaries than in crystal grains.

FIELD OF THE INVENTION

The present invention relates to a hard film having excellent wearresistance, adhesion and high-temperature oxidation resistance, which isformed on cemented carbide, high-speed steel, die steel, etc.,particularly to a hard film for being formed on wear-resistant membersrequiring high hardness such as cutting tools, forming dies, bearings,dies and rolls, and heat-resistant members such as internal combustionengine parts. The present invention also relates to a tool coated withsuch a hard film.

BACKGROUND OF THE INVENTION

As hard films having high-temperature oxidation resistance, various hardfilms of AlCr were proposed. Japanese Patent 3027502 discloses awear-resistant amorphous hard film with high-hardness having acomposition represented by the general formula of(Al_(a)M_(b))_(100-c)X_(c), wherein M is at least one element selectedfrom the group consisting of Ti, Ta, V, Cr, Zr, Nb, Mo, Hf, W. Fe, Co,Ni, Cu and Mn, X is at least one element selected from the groupconsisting of N, O and C, and a, b and c are atomic % meeting 60%≦a98.5%, 1.5%≦b≦40%, 0%<c≦65%, and a+b=100%. However, this amorphous filmhas a Knoop hardness of about 21 GPa at most, insufficient in wearresistance and adhesion.

Japanese Patent 3039381 discloses a method comprising generating a vapormixture of Al and Cr from a target composed of 25–50 atomic % of Al and75–50 atomic % of Cr disposed in a vacuum chamber by arc discharge, andsimultaneously introducing a nitrogen gas into the vacuum chamber tocause a reaction between the vapor mixture and the nitrogen gas, therebyforming an Al—Cr—N composite hard film having excellent high-temperatureoxidation resistance that prevents oxidation even at 800–900° C. on asubstrate. Also, JP 2002-160129 A discloses a method forsurface-treating a tool, comprising forming an intermediate layer of Ti,Cr, Si or Al on a substrate surface, and coating the intermediate layerwith a hard film of AlCrN. These hard films are made of AlCr nitridehaving a high-temperature oxidation resistance of about 1000° C.However, they do not have oxidation resistance exceeding 1000° C.Further, these hard films had as insufficient hardness Hv as about 21GPa, poor in wear resistance.

OBJECTS OF THE INVENTION

Accordingly, an object of the present invention is to provide a hardfilm having excellent adhesion, hardness, high-temperature oxidationresistance and wear resistance.

Another object of the present invention is to provide a tool coated withsuch a hard film.

DISCLOSURE OF THE INVENTION

The first hard film of the present invention is formed by anarc-discharge ion-plating method, and has a composition comprising metalcomponents represented by Al_(x)Cr_(1-x), wherein x is an atomic ratiomeeting 0.45≦x≦0.75, and non-metal components represented byN_(1-α-β-γ)B_(α)C_(β)O_(γ), wherein α, β and γ are respectively atomicratios meeting 0≦α≦0.15, 0≦β≦0.35, and 0.01≦γ≦0.25, with the maximumX-ray diffraction intensity in a (200) face or a (111) face, and withthe binding energy of Al and/or Cr to oxygen in a range of 525–535 eV inan X-ray photoelectron spectroscopy.

In the first hard film, x is preferably 0.5–0.7. α is preferably 0–0.12,more preferably 0–0.08. β is preferably 0–0.2, more preferably 0–0.1. γis preferably 0.01–0.2.

The second hard film of the present invention is formed by anarc-discharge ion-plating method, and has a composition comprising metalcomponents represented by Al_(x)Cr_(1-x-y)Si_(y) wherein x and y arerespectively atomic ratios meeting 0.45≦x≦0.75, and 0<y≦0.35, andnon-metal components represented by N_(1-α-β-γ)B_(α)C_(β)O_(γ), whereinα, β and γ are respectively atomic ratios meeting 0≦α≦0.15, 0≦β≦0.35,and γ≦0.25, with the binding energy of Al, Cr and/or Si to oxygen in arange of 525–535 eV in an X-ray photoelectron spectroscopy.

In the second hard film, x is preferably 0.5–0.7. The upper limit of yis preferably 0.2, and the lower limit of y is preferably 0.005, morepreferably 0.01. α is preferably 0–0.12, more preferably 0–0.08. γ ispreferably 0–0.2, more preferably 0–0.1. γ is preferably 0.01–0.25, morepreferably 0.01–0.2.

In the second hard film, Si preferably exists in the form of a nitride,an oxide and a metal, and when the relative intensities of the Si metaland its nitride and oxide determined by X-ray photoelectron spectroscopyare represented by I(Si), I(Si—N) and I(Si—O), respectively, withI(Si)+I(Si—N)+I(Si—O)=100%, I(Si—N) is preferably 52% or more. This hardfilm preferably has a crystal structure having the maximum X-raydiffraction intensity in a (200) face or a (111) face.

The third hard film of the present invention is formed by anarc-discharge ion-plating method, and has a composition comprising metalcomponents represented by Al_(x)Cr_(1-x-y)Si_(y), wherein x and y arerespectively atomic ratios meeting 0.45≦x≦0.75, 0≦y≦0.35, and 0.5≦x+y<1,and non-metal components represented by N_(1-α-β-γ)B_(α)C_(β)O_(γ),wherein α, β and γ are respectively atomic ratios meeting 0≦α≦0.15,0≦β≦0.35, and 0.003≦γ≦0.25, and an NaCl-type crystal structure, with ahalf width of 2θ at an X-ray diffraction peak corresponding to a (111)face or a (200) face being 0.5–2.0°, the above hard film containingoxygen more in grain boundaries than in crystal grains.

In the third hard film, x is preferably 0.5–0.7. y is preferably 0–0.2,more preferably 0–0.1. α is preferably 0–0.12, more preferably 0–0.08. βis preferably 0–0.2, more preferably 0–0.1. γ is preferably 0.01–0.25,more preferably 0.01–0.2.

The third hard film preferably has the binding energy of Al, Cr and/orSi to oxygen in a range of 525–535 eV in an X-ray photoelectronspectroscopy. The third hard film preferably has the maximum oxygenconcentration in a region of depth within 500 nm from the outermostsurface. It preferably meets 0.3<I(200)/I(111)<12, wherein I(111) andI(200) are the X-ray diffraction intensities of a (111) face and a (200)face, respectively.

In the first to third hard films, a ratio of the total amount ofnon-metal elements (N+B+C+O) to the total amount of metal elements(Al+Cr or Al+Cr+Si) is stoichiometrically more than 1, preferably 1.1 ormore. The upper limit of this ratio is preferably 1.7. If this ratioexceeded 1.7, then the hard film would have low peeling resistance.

From the aspect of balance between wear resistance and adhesion, theelastic recovery ratio E of the hard film of the present invention ispreferably 28–42%, more preferably 30–40%. Particularly, the elasticrecovery ratios E of the first and second hard films are preferably30–40%, and the elastic recovery ratio E of the third hard film ispreferably 28%–40%. The elastic recovery ratio E may be determined bythe equation of 100−[(contact depth)/(the maximum displacement at themaximum load)]. The contact depth and the maximum displacement at themaximum load can be determined by a nano-indentation method (W. C.Oliverand, G. M. Pharr: J. Mater. Res., Vol. 7, NO. 6, June 1992, pp.1564–1583).

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a graph showing the binding energy of Cr—O and Al—O in Example1;

FIG. 2 is a graph showing the binding energy of Cr—N and Cr—O in Example1;

FIG. 3 is a graph showing the binding energy of Al—N and Al—O in Example1;

FIG. 4 is a graph showing the X-ray diffraction in Example 1;

FIG. 5 is a graph showing the relation between the amount of Al andhardness in the AlCrNO film and the AlCrN film;

FIG. 6 is a graph showing the relation between displacement and load inExample 5 and Comparative Example 5;

FIG. 7 is a graph showing a wide spectrum profile of the X-rayphotoelectron spectroscopy in Example 10;

FIG. 8 is a graph showing the X-ray diffraction in Example 10;

FIG. 9 is a graph showing a narrow spectrum profile of the X-rayphotoelectron spectroscopy in Example 12;

FIG. 10 is a graph showing a narrow spectrum profile of the X-rayphotoelectron spectroscopy in Example 16;

FIG. 11 is a graph showing the relation between displacement and load inExample 17 and Comparative Example 5;

FIG. 12 is a graph showing the relation between the amount of Al andhardness in the AlCrSiNO film and the AlCrN film;

FIG. 13 is an electron field emission transmission electron micrographshowing the cross section of the hard film of Example 25;

FIG. 14 is a graph showing the analysis results by electron-beamenergy-loss spectroscopy in a region of the crystal grain 2 in FIG. 13;

FIG. 15 is a graph showing the analysis results by electron-beamenergy-loss spectroscopy in a portion shown by the arrow in theboundaries in FIG. 13;

FIG. 16 is a graph showing the X-ray photoelectron spectrum of the hardfilm of Example 25;

FIG. 17 is a graph showing the element analysis results of the hard filmof Example 25 by X-ray photoelectron spectroscopy in a film thicknessdirection; and

FIG. 18 is a graph showing the O_(1s) spectra of X-ray photoelectronspectroscopy measured every 24 minutes in Example 25.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[1] Hard Film

(A) Composition

(1) First Hard Film

The first hard film has a composition comprising metal componentsrepresented by Al_(x)Cr_(1-x), wherein x is an atomic ratio meeting0.45≦x≦0.75, and non-metal components represented byN_(1-α-β-γ)B_(α)C_(β)O_(γ), wherein α, β and γ respectively atomicratios meeting 0≦α≦0.15, 0≦β≦0.35, and 0.01≦γ≦0.25.

When the amount x of Al is less than 0.45, there are no sufficienteffects of improving the hardness and high-temperature oxidationresistance of the hard film. On the other hand, when x exceeds 0.75, thehard film has an excess residual compression stress, resulting inself-destruction immediately after coating and thus drastic decrease instrength. The preferred range of x is 0.5–0.7.

The addition of boron is preferable because it provides the hard filmwith improved resistance to deposit to a mating member, and a decreasedfriction coefficient at high temperatures. However, when the amount a ofboron exceeds 0.15, the film becomes brittle. The upper limit of α ispreferably 0.12, more preferably 0.08.

The addition of carbon is effective to increase the hardness of the hardfilm and reduce the friction coefficient thereof at room temperature.When the amount β of carbon exceeds 0.35, the film becomes brittle. Theupper limit of β is preferably 0.2, more preferably 0.1.

Oxygen has effects of improving the hardness, high-temperature oxidationresistance and wear resistance of the hard film, as well as the adhesionof the hard film to a substrate. To achieve such effects, the amount γof oxygen should be 0.01–0.25. When γ is less than 0.01, the addition ofoxygen does not provide sufficient effects. On the other hand, when γexceeds 0.25, the film has extremely decreased hardness, resulting inpoor wear resistance. γ is preferably 0.01–0.2, particularly 0.02–0.2.

A ratio of the total amount of non-metal elements (N+B+C+O) to the totalamount of metal elements (Al+Cr) is stoichiometrically more than 1,preferably 1.1 or more. The upper limit of this ratio is preferably 1.7.

(2) Second Hard Film

The second hard film has a composition comprising metal componentsrepresented by Al_(x)Cr_(1-X-Y)Si_(y), and non-metal componentsrepresented by N_(1-α-β-γ)B_(α)C_(β)O_(γ). The composition of the secondhard film is the same as that of the first hard film except that theformer contains Si. Accordingly, explanation will thus be made only onSi. The other elements may be the same as in the first hard film. Withrespect to the structure and characteristics, too, the second hard filmmay be the same as the first hard film unless otherwise mentioned.

The addition of Si makes the hard film harder, drastically improving itswear resistance. The amount y of Si is generally 0.35 or less,preferably 0.2 or less. When y is more than 0.35, the hard film has anexcess residual compression stress, which may cause self-destruction andform hexagonal crystals immediately after coating, resulting in drasticdecrease in strength. The lower limit of y is preferably 0.005, morepreferably 0.01.

A ratio of the total amount of non-metal elements (N+B+C+O) to the totalamount of metal elements (Al+Cr+Si) is stoichiometrically more than 1,preferably 1.1 or more. The upper limit of this ratio is preferably 1.7.

(3) Third Hard Film

The third hard film has a composition comprising metal componentsrepresented by Al_(x)Cr_(1-x-y)Si_(y), wherein x and y are respectivelyatomic ratios meeting 0.45≦x≦0.75, 0≦y≦0.35, and 0.5≦x+y<1, andnon-metal components represented by N_(1-α-β-γ)B_(α)C_(β)O_(γ), whereinα, β and γ are respectively atomic ratios meeting 0≦α≦0.15, 0≦β≦0.35,and 0.003≦γ≦0.25. The composition of the third hard film is the same asthat of the first hard film except for the inclusion of Si and thecontent of O. Accordingly, the amounts of Si and O will be explainedhere. With respect to the amounts of the other elements, the third hardfilm may be the same as the first hard film, and with respect to thestructure and characteristics, they may be the same unless otherwisementioned.

The addition of Si provides the hard film with higher hardness,drastically improving its wear resistance. The amount y of Si isgenerally 0–0.35, preferably 0–0.2, more preferably 0–0.1. When yexceeds 0.35, a residual compression stress in the hard film becomesexcessive, which may cause self-destruction and form hexagonal crystalsimmediately after coating, resulting in drastic decrease in strength.Because the lower limit of y is 0, the third hard film may contain noSi.

The amount γ of oxygen is 0.003–0.25. When γ is less than 0.003, thereis no effect by the addition of oxygen. On the other hand, when γ ismore than 0.25, the film has extremely low hardness, and thus poor wearresistance. The preferred lower limit of γ is 0.01, while its preferredupper limit is 0.2.

A ratio of the total amount of non-metal elements (N+B+C+O) to the totalamount of metal elements (Al+Cr+Si) is stoichiometrically more than 1,preferably 1.1 or more. The upper limit of this ratio is preferably 1.7.

(B) Crystal Structure and Characteristics

(1) Crystal Structure

Any of the hard films of the present invention has the maximum X-raydiffraction intensity in a (200) face or a (111) face. The half width of2θ in the X-ray diffraction peak corresponding to the (111) face or the(200) face is preferably 0.5–2.0°. A ratio [I(200)/I(111)] of the X-raydiffraction intensities of the (111) face and the (200) face ispreferably 0.3–12. When I(200)/I(111) is less than 0.3, the hard filmhas such low crystallinity that irregular wear conspicuous in theconventional amorphous hard films is likely to occur. On the other hand,when I(200)/I(111) exceeds 12, the film hardness decreases, resulting inthe deterioration of wear resistance. It is thus clear that any of thehard films of the present invention has an NaCl-type crystal structure.Because of such crystal structure, the hard films have excellenttoughness and adhesion to a substrate.

In the case of the hard film containing Si, I(Si—N) is preferably 52% ormore, when the relative intensities of the Si metal and its nitride andoxide determined by X-ray photoelectron spectroscopy are represented byI(Si), I(Si—N) and I(Si—O), respectively, withI(Si)+I(Si—N)+I(Si—O)=100%. The hard film meeting this condition hashigh hardness and thus excellent wear resistance.

(2) Bonding to Oxygen

When a residual compression stress increases in the hard film, the filmhardness generally becomes higher, and its adhesion to a substrate tendsto deteriorate. Because hardness and adhesion are thus in a trade-offrelation, high hardness has conventionally been sought while sacrificingthe adhesion to a substrate to some extent. According to the presentinvention, oxygen is added to a film of AlCr or AlCrSi, and controlledto exist more in grain boundaries than in crystal grains, to suppressthe diffusion of oxygen into the hard film from outside, therebydrastically improving oxidation resistance. As a result, it is possibleto provide a hard film having high hardness, extremely decreasedresidual compression stress, and extremely, improved adhesion to asubstrate.

The hard film of the present invention containing a predetermined amountof oxygen has the binding energy of Al and/or Cr (or Al, Cr and/or Si)to oxygen in 525–535 eV in X-ray photoelectron spectroscopy. Theexistence of Al—O and/or Cr—O (or Al—O, Cr—O and/or Si—O) makes obscuregrain boundaries functioning as oxygen diffusion paths, thereby makingit difficult for oxygen to diffuse in the hard film. Also, because Crand Al (and Si) exist in the form of nitrides, oxides and oxinitrides,the hard film is dense, thereby suppressing the oxidation of the hardfilm and having high hardness.

When there is the maximum oxygen concentration in the hard film in aregion of depth within 500 nm from the outermost surface in a filmthickness direction, the hard film has suppressed oxygen diffusion,extremely improved high-temperature oxidation resistance, and loweredfriction. On the other hand, when there is the maximum oxygenconcentration in a region of depth exceeding 500 nm, the hard film haslow wear resistance.

(3) Elastic Recovery Ratio

In any of the hard films of the present invention, its elastic recoveryratio E determined by a nano-indentation method is preferably 28–42%.The elastic recovery ratio E in this range can be achieved bycontrolling film-forming conditions such as bias voltage, the partialpressure of each reaction gas, a substrate temperature, etc. When Eexceeds 42%, a residual compression stress becomes too high in the hardfilm, resulting in poor toughness and lowered adhesion to a substrate.On the other hand, when E is less than 28%, the hard film isinsufficient in strength and wear resistance, suffering from irregularwear, etc. The elastic recovery ratio E is preferably 30–40%,particularly 32–38%.

(C) Combination with Another Hard Film

With another hard film formed on the hard film of the present invention,the wear resistance can be further improved. Usable as another hard filmis (a) a hard film comprising at least one metal element selected fromthe group consisting of Ti, Cr, Al and Si, and N, or N and at least onenon-metal element selected from the group consisting of C, O and B, (b)a hard carbon film, or (c) a hard boron nitride film. These hard filmsmay be laminated in arbitrary combination. Al, Ti and/or Cr in anotherhard film form oxides (TiO₂, Al₂O₃, Cr₂O₃), making layer separationdifficult. Accordingly, the hard film exhibits excellent wear resistanceeven in a kinetic wear environment at high temperatures.

[2] Production of Hard Film

To form the hard film of the present invention containing oxygen, namelyhaving Al—O and/or Cr—O (or Al—O, Cr—O and/or Si—O), it is preferable toconduct an arc-discharge ion-plating method, using (a) anoxygen-containing metal target as an evaporation source, and/or (b) anoxygen-containing reaction gas. When the oxygen-containing metal targetis used, the oxygen content in the metal target is preferably 2000 ppmor more, more preferably 2500 ppm or more. The upper limit of the oxygencontent in the metal target is preferably 9800 ppm. When the upper limitof the oxygen content exceeds 9800 ppm, arc discharge becomes unstable,resulting in the tendency of increasing large particles and thus makingthe hard film surface rougher. For instance, the oxygen content in themetal target is 1800 ppm or less, there is substantially no differencein an oxygen concentration between crystal grains and boundaries. Theoxygen concentration is determined from the intensity of an oxygen peakmeasured by electron-beam energy-loss spectroscopy, to determine a ratioP of the oxygen concentration in grain boundaries to that in crystalgrains. P should be more than 1 and is preferably 4 or less.

An arc-discharge ion-plating apparatus comprises a vacuum chamber, anarc-discharge evaporation source insulated from the vacuum chamber, anda substrate holder. With electric current supplied to the arc-dischargeevaporation source, arc discharge is caused on the target to ionizemetal components. The substrate is heated to 500° C., for instance, by aheater disposed in the vacuum chamber. A film-forming atmosphere in thevacuum chamber contains active gases such as N₂, O₂, C₂H₂, etc. Whileapplying a negative bias voltage to the substrate holder, a hard filmcomprising target metals and N or N and O and/or C is caused to grow onthe substrate.

When a bias voltage is applied to the substrate, the resultant hard filmcan have higher adhesion to the substrate. To obtain a dense hard filmhaving excellent adhesion, high-temperature oxidation resistance andwear resistance, the film-forming conditions are preferably a gaspressure of 1.5–15 Pa, particularly 2–5 Pa, a substrate temperature of450° C. to 700° C., and as low bias voltage as −15 V to −300 V.

[3] Hard Film-coated Members

The hard film of the present invention having excellent adhesion ispreferably formed on substrates such as various tools such as drills,taps, reamers, end mills, gear-cutting tools, broaches and exchangeableinserts, molding dies, etc. Preferred materials for the substrateinclude high-speed steel, die steel, heat-resistant steel, bearingsteel, austenitic stainless steel, cemented carbide, cermets, etc. Thehard film of the present invention epitaxially grows on a substratecomprising, for instance, Fe, Ni and/or Co. Accordingly, it is possibleto provide hard film-coated members having, excellent high-temperatureoxidation resistance and wear resistance without suffering from peelingfrom a substrate, etc.

When the hard film of the present invention is formed on a tool, forinstance, a roughing end mill, particularly made of cemented carbide orhigh-speed steel, it is possible to provide a hard film-coated toolhaving excellent adhesion, peeling resistance, hardness and wearresistance. Smoothing of a surface of the hard film-coated tool bymechanical working such as grinding, etc. effectively improves thewithdrawal of chips and the suppression of the chipping of cutting edgesduring a cutting operation, resulting in further improvement in acutting life.

The present invention will be specifically described below withreference to Examples without intention of restricting the scope of thepresent invention. The composition of the hard film in each Example andComparative Example was analyzed by an electron probe microanalyzer withcurrent for measuring the metal components set at 0.5 μA, and currentfor measuring the non-metal components set at 0.1 μA. Accordingly, aratio of the metal components to the non-metal components was notdetermined. Though the metal components and the non-metal components areconveniently shown by one formula as the composition of the hard film ineach Example and Comparative Example, it does not mean that a ratio ofthe metal components to the non-metal components is 1:1.

EXAMPLE 1

A substrate made of cemented carbide containing 13.5% by mass of Co, andan AlCrB alloy target containing 3100 ppm of oxygen were placed in avacuum chamber, and a reaction gas comprising N₂ and C₂H₂ wereintroduced into the vacuum chamber with the total pressure in thechamber set at 3.0 Pa. With a bias voltage of −100 V and a substratetemperature of 450° C., a hard film of(Al_(0.6)Cr_(0.4))(N_(0.80)C_(0.08)O_(0.10)B_(0.02)) having a thicknessof about 5 μm was formed on the substrate. The composition of the hardfilm was measured by an electron probe X-ray microanalysis and an Augerelectron spectroscopy.

Using an X-ray photoelectron spectroscope of a 1600S type available fromPHI, the X-ray photoelectron spectroscopic analysis of the hard film wascarried out. The results are shown in FIGS. 1–3. FIG. 1 shows that therewas a metal-oxygen binding energy at around 530 eV, FIG. 2 shows theexistence of bonds of Cr—N and Cr—O, and FIG. 3 shows the existence ofbonds of Al—N and Al—O. The X-ray diffraction pattern shown in FIG. 4indicates that the hard film is most oriented in a (200) face.

EXAMPLES 2–4, COMPARATIVE EXAMPLES 1–6

Hard films having compositions represented by(Al_(x)Cr_(1-x))(N_(0.95)O_(0.05)) were formed in the same manner as inExample 1. x was 0.2 in Comparative Example 1, 0.3 in ComparativeExample 2, 0.5 in Example 2, 0.6 in Example 3, 0.7 in Example 4, and 0.8in Comparative Example 3. Hard films having compositions represented by(Al_(x)Cr_(1-x))N were also formed in the same manner. x was 0.2 inComparative Example 4, 0.5 in Comparative Example 5, and 0.7 inComparative Example 6.

Using a micro-indentation hardness tester equipped with atriangular-pyramidal diamond indenter having a width tip angle of 115°,the indentation hardness of each hard film was measured under theconditions of the maximum load of 49 mN and a loading step of 4.9mN/sec, with the maximum load kept for 1 second. The results are shownin FIG. 5. The indentation hardness shown in FIG. 5 is an average valueof 10 measured values. FIG. 5 reveals that the hard films of Examples2–4 having an Al content in a range of 45–75 atomic % had as highhardness as more than 40 GPa. The preferred hardness of the hard film ofthe present invention is 45–52 GPa. The hard films of Examples 2–4 wereexcellent in adhesion to a substrate and wear resistance.

EXAMPLES 5–9, COMPARATIVE EXAMPLES 7–9

Hard films having compositions shown in Table 1 were formed onsubstrates of cemented carbide, high-speed steel and die steel in thesame manner as in Example 1. Table 1 also shows the oxide layerthickness, indentation hardness, residual compression stress and elasticrecovery ratio of each hard film. The thickness of the oxide layer wasmeasured after keeping each hard film at 1100° C. for 1 hour and 9hours, respectively, in the air. The indentation hardness was measuredin the same manner as in Example 2. The residual compression stress wascalculated from the deformation of a thin plate. The elastic recoveryratio was determined by a nano-indentation method.

TABLE 1 Thickness (μm) of Oxide Layer after Kept at Indentation FilmComposition 1100° C. for Hardness No. (atomic ratio) 1 hr. 9 hrs. (GPa)Example 5 (Al_(0.6)Cr_(0.4))(N_(0.95)O_(0.05)) 0.1 0.6 48.8 Example 6(Al_(0.6)Cr_(0.4))(N_(0.92)O_(0.08)) 0.1 0.4 49.4 Example 7(Al_(0.5)Cr_(0.4))(N_(0.90)O_(0.05)C_(0.05)) 0.2 1.1 48.3 Example 8(Al_(0.6)Cr_(0.4))(N_(0.93)O_(0.05)B_(0.02)) 0.1 0.3 49.8 Example 9(Al_(0.6)Cr_(0.4))(N_(0.87)O_(0.10)B_(0.03)) 0.2 1.4 50.3 Comparative(Al_(0.2)Cr_(0.8))(N_(0.95)O_(0.05)) 2.4 3.4 34.6 Example 7 Comparative(Al_(0.8)Cr_(0.2))(N_(0.95)O_(0.05)) 0.1 0.7 39.2 Example 8 Comparative(Al_(0.6)Cr_(0.4))(N_(0.45)O_(0.55)) 1.8 3.9 38.8 Example 9 Comparative(Al_(0.5)Cr_(0.5))N 2.9 >5.0 36.9 Example 5 Peeling of Hard FilmResidual Elastic High- Compression Recovery Cemented Speed Die No.Stress (GPa) Ratio (%) Carbide⁽¹⁾ Steel⁽²⁾ Steel⁽³⁾ Example 5 −2.2 34.5no no no Example 6 −2.2 34.1 no no no Example 7 −2.3 34.8 no no noExample 8 −1.9 35.2 no no no Example 9 −2.3 35.7 no no no Comparative−2.9 27.6 no no no Example 7 Comparative −3.7 30.0 yes yes yes Example 8Comparative −2.7 30.9 no yes yes Example 9 Comparative −2.6 31.8 yes yesyes Example 5 Note: ⁽¹⁾Containing 13.5% by mass of Co. ⁽²⁾Formed fromhigh-speed steel powder containing 8% by mass of Co. ⁽³⁾SKD61.

It was confirmed from the data of the thickness of the oxide layer thatthe hard films of Examples 5–9 were substantially not oxidized,excellent in a high-temperature oxidation resistance. On the contrary,the hard film of Comparative Example 5 was extremely oxidized, and thediffusion of oxygen reached the substrate. The hard films of Examples5–9 were higher in indentation hardness and lower in residual stressthan those of Comparative Examples 5, 7–9.

It is clear from a load-displacement curve shown in FIG. 6 that the hardfilm of Example 5 was large in the maximum displacement and small inplastic deformation at the maximum load, meaning that there is largeelastic recovery when the same stress is applied to the hard film. Anelastic recovery ratio E was determined from this load-displacementcurve. It is clear from Table 1 that the hard films of Examples 5–9 areexcellent in elastic recovery characteristics. The hard films ofExamples 5–9 having excellent elastic recovery characteristics haddecreased peeling and cracking and thus excellent adhesion to thesubstrate.

Using a Rockwell hardness meter, each hard film was given a dent at aload of 150 N, to observe the peeling of the film by an opticalmicroscope. The results are shown in Table 1. The hard films of Examples5–9 were free from peeling, proving excellent adhesion. This is due tothe fact that the hard films of Examples had proper elastic recoveryratios E. On the other hand, each hard film of Comparative Examples 5and 7–9 having a low elastic recovery ratio E failed to follow thedeformation of the substrate, resulting in peeling in a portion near thedent.

EXAMPLE 10, COMPARATIVE EXAMPLE 10

Using an AlCrSi alloy target having an oxygen content of 3300 ppmproduced by a powder metallurgy method to have a targeted composition,and introducing an active gas comprising a nitrogen gas, an oxygen gasand, if necessary, an acetylene gas into a vacuum chamber with the totalgas pressure set at 3.0 Pa, a hard film of Example 10 of(Al_(0.60)Cr_(0.36)Si_(0.04))(N_(0.8)C_(0.1)O_(0.1)) having a thicknessof about 5 μm was formed on a mirror-polished substrate formed by finecemented carbide particles containing 13.5% by mass of Co, at a biasvoltage of −100 V and at a film-forming temperature of 450° C. by anarc-discharge ion-plating method. Also, using the same target as inExample 10 except that its oxygen content was 1800 ppm, a hard film ofComparative Example 10 was formed under the same film-forming conditionsas in Example 10.

After the surface of each hard film was etched by an Ar ion gun for 5minutes to remove contaminations from each hard film surface, X-rayphotoelectron spectroscopic analysis was conducted to obtain a widespectrum for each hard film. And after etching for 30 seconds, X-rayphotoelectron spectroscopic analysis was conducted to obtain a narrowspectrum for each hard film. X-ray photoelectron spectroscopic analysiswas carried out in a circular region having a diameter of 0.4 mm in eachhard film at 400 W by an X-ray photoelectron spectroscope of a 1600Stype available from PHI using MgKα as an X-ray source. An etching rateby the Ar ion gun was 1.9 nm/minute as converted to SiO₂. Thecomposition of the resultant hard film was determined by an electronprobe X-ray microanalysis and an Auger electron spectroscopy.

The wide spectrum of the hard film of Example 10 is shown in FIG. 7.FIG. 7 indicates the existence of Si and O and the binding energy ofSi—O in the hard film of Example 10. It is also clear from an X-raydiffraction pattern shown in FIG. 8 that the hard film of Example 10 hascrystal structure oriented most in a (200) face. On the other hand,there was no peak indicating the bonding of oxygen at around 530 eV inthe hard film of Comparative Example 10.

EXAMPLES 11–16, COMPARATIVE EXAMPLES 11 AND 12

Using targets (oxygen content: 3300 ppm) having metal compositions forthe targeted film composition, and mirror-polished substrates formedfrom fine cemented carbide particles containing 13.5% by mass of Co,hard films having compositions shown in Table 2 were formed by anarc-discharge ion-plating method under the film-forming conditions shownin Table 2. The intensity of Si—N, Si—O and Si in each hard film wasdetermined by X-ray photoelectron spectroscopy. The results are shown inTable 2.

TABLE 2 Film-Forming Conditions Bias Gas Substrate Film CompositionVoltage Pressure Temperature No. (atomic ratio) (V) (Pa) (° C.) Example11 (Al_(0.6)Cr_(0.35)Si_(0.05)) −100 2.0 500 (N_(0.85)O_(0.09)C_(0.06))Example 12 (Al_(0.6)Cr_(0.35)Si_(0.05)) −100 5.0 500(N_(0.85)O_(0.09)C_(0.06)) Example 13 (Al_(0.6)Cr_(0.36)Si_(0.04)) −2005.0 500 (N_(0.85)O_(0.09)C_(0.06)) Example 14(Al_(0.6)Cr_(0.36)Si_(0.04)) −300 5.0 500 (N_(0.85)O_(0.09)C_(0.06))Example 15 (Al_(0.6)Cr_(0.35)Si_(0.05)) −200 5.0 350(N_(0.85)O_(0.09)C_(0.06)) Example 16 (Al_(0.5)Cr_(0.35)Si_(0.15)) −1005.0 500 (N_(0.85)O_(0.11)C_(0.04)) Comparative(Al_(0.6)Cr_(0.36)Si_(0.04)) −200 5.0 800 Example 11(N_(0.85)O_(0.09)C_(0.06)) Comparative (Al_(0.6)Cr_(0.35)Si_(0.05)) −1000.5 500 Example 12 (N_(0.85)O_(0.09)C_(0.06)) Intensity (%) No. I(Si—N)I(Si—O) I(Si) Example 11 52.3 12.7 35.0 Example 12 58.3  9.1 32.6Example 13 61.2 13.5 25.3 Example 14 68.5 10.6 20.9 Example 15 63.5 11.125.4 Example 16 70.9 10.3 18.8 Comparative 44.2 17.6 38.2 Example 11Comparative 48.3 15.2 36.5 Example 12

Each relative intensity was calculated by peak separation in the Si_(2p)spectrum of each hard film shown in Table 2, and the peak separation wascarried out by a peak-fitting method, with the peak position of Si—N setat 101.2±0.2 eV, the peak position of Si—O set at 103.3±0.2 eV, and thepeak position of Si (metal) set at 99.3±0.2 eV. FIG. 9 shows a narrowspectrum of Si_(2p) in Example 12, and FIG. 10 shows a narrow spectrumof Si_(2p) in Example 16.

It is clear from Table 2 that the preferred film-forming conditions formaking I(Si—N)/[I(Si—N)+I(Si—O)+I(Si)] of 52% or more are a gas pressureof about 2.0–5.0 Pa, a bias voltage of −100 V to −300 V, and afilm-forming temperature of 350° C. to 500° C. I(Si—N) changes not onlyby the film-forming conditions but also by the film composition.

EXAMPLES 17–21, COMPARATIVE EXAMPLES 13–15

Hard films having compositions shown in Table 3 were formed on amirror-polished substrate of SNMN432 formed by cemented carbidecontaining 13.5% by mass of Co under the same film-forming conditions asin Example 10. Each hard film was kept at 1100° C. for 1 hour and 9hours, respectively, in the air, to measure the thickness of an oxidelayer on each hard film. The results are shown in Table 3 together withthose of Comparative Example 5. It is clear from Table 3 that the hardfilms of Examples 17–21 were not drastically oxidized, proving that theywere excellent in a high-temperature oxidation resistance. On the otherhand, the hard film of Comparative Example 13 containing 20 atomic % ofAl was much more oxidized than those of Examples 17–21, proving that theformer was poorer in a high-temperature oxidation resistance.

The cross section of each of the same hard films was mirror-polished by0.1-μm grinding diamond particles with inclination of 5°. Theindentation hardness of the hard film was measured at a depth of 3.5 μmfrom the film surface under the following conditions. Namely, using amicro-indentation hardness tester equipped with a Berkovich-typetriangular-pyramidal diamond indenter having a width tip angle of 115°,the indentation hardness of each hard film was measured under theconditions of the maximum load of 49 mN and a loading step of 4.9mN/sec, with the maximum load kept for 1 second. Because a ratio (T/L)of the thickness T of the hard film to the maximum indentation depth Lrelative to a load is 10 or more, the hardness of the hard film per secan be measured without influence of the substrate. Table 3 shows anaverage value of 10 measured values. Table 3 also shows the residualcompression stress of the hard film calculated from the deformation of athin plate.

It is clear from Table 3 that the hard films of Examples 17–21 werelower in residual stress and higher in hardness than theAl_(0.5)Cr_(0.5)N film of Comparative Example 5. On the other hand, thehard film of Comparative Example 13 containing 20 atomic % of Al waslower in hardness and poorer in a high-temperature oxidation resistancethan those of Examples 17–21. Though the hard film of ComparativeExample 14 containing 30 atomic % of Si had an improved high-temperatureoxidation resistance, it was lower in hardness and poorer in wearresistance than those of Examples 17–21. The hard film of ComparativeExample 15 containing 85 atomic % of Al had low hardness andinsufficient wear resistance.

Hard films having compositions shown in Table 3 were formed on groundsubstrates of SNMN432 formed by cemented carbide containing 13.5% bymass of Co, high-speed steel containing 8% by mass of Co, and SKD diesteel, respectively, under the same film-forming conditions as inExample 10. An indenter of a Rockwell hardness meter was pressed ontoeach hard film under a load of 1470 N, to observe by an opticalmicroscope whether or not there was peeling near the dent. Table 3 showsthe presence and absence of peeling. It is clear from Table 3 that thehard films of Examples 17–21 do not peel from any substrates, exhibitingexcellent adhesion. On the other hand, the hard film of ComparativeExample 5 could not follow the deformation of the substrate, resultingin peeling in a portion near the dent.

Coated cutting tools, etc. are microscopically plastically deformed incutting edges and their vicinities in a cutting stress direction duringa cutting operation. When the cutting edges are plastically deformed,peeling and cracking occur in the hard film, likely to cause irregularwear and damage to the cutting edges. Thus, the plastic deformationresistance of the hard film is important in a kinetic environmentaccompanied with plastic deformation. Therefore, with respect to thehard films of Examples 17–21 and Comparative Examples 13–15 producedunder the same film-forming conditions as in Example 10,load-displacement curves were obtained by the same nano-indentationmethod as above. The elastic recovery ratio E of each hard film wasdetermined from each load-displacement curve. The results are shown inTable 3 together with those of Comparative Example 5. It is clear fromTable 3 that the hard films of Examples 17–21 had better elasticrecovery characteristics than the hard films of Comparative Examples 5and 13–15. With a high elastic recovery ratio, the peeling and crackingof the hard film are suppressed in a kinetic environment causing wear,etc., proving that the hard film has good adhesion to the substrate.Examples 17–21 reveal that the elastic recovery ratio E is morepreferably 30–40%, particularly 32–40%.

FIG. 11 shows the load-displacement curves of Example 17 and ComparativeExample 5. It is clear from FIG. 11 that the hard film of Example 17 islarge in the maximum displacement at the maximum load, small in aplastic deformation representing a permanent strain, and large in anelastic recovery ratio when the same stress was applied.

To examine high-temperature stability, hard films having compositionsshown in Table 3 were formed on the above cemented carbide substrate inthe same manner as in Example 10. Each hard film was kept at roomtemperature, 1100° C. and 1200° C., respectively, for 4 hours in vacuum,to measure its micro-indentation hardness in the same manner as above.The results are shown in Table 3. The hard films of Examples 17–21 didnot suffer from remarkable decrease in hardness in a high-temperatureenvironment. On the other hand, the hard film of Comparative Example 5after kept at 1100° C. for 4 hours had indentation hardness of 35.5 GPa,indicating that its hardness decreased to substantially the same levelas that of a TiN film. C and Co were diffused from the substrate intothe hard film after keeping at 1200° C. for 4 hours in ComparativeExample 5.

TABLE 3 Thickness (μm) of Oxide Layer after Kept at Indentation ResidualFilm Composition 1100° C. for Hardness Compression No. (atomic ratio) 1hr. 9 hrs. (GPa) Stress (GPa) Example 17(Al_(0.6)Cr_(0.35)Si_(0.05))(N_(0.95)O_(0.05)) 0.1 0.6 50.7 −2.3 Example18 (Al_(0.5)Cr_(0.35)Si_(0.15))(N_(0.92)O_(0.08)) 0.1 0.4 52.2 −2.4Example 19 (Al_(0.55)Cr_(0.44)Si_(0.01))(N_(0.95)O_(0.05)) 0.1 0.8 49.2−2.4 Example 20 (Al_(0.6)Cr_(0.35)Si_(0.05))(N_(0.93)O_(0.05)B_(0.02))0.1 0.3 50.0 −2.6 Example 21(Al_(0.6)Cr_(0.35)Si_(0.05))(N_(0.80)O_(0.05)C_(0.15)) 0.1 1.4 51.6 −2.4Comparative (Al_(0.20)Cr_(0.75)Si_(0.05))(N_(0.95)O_(0.05)) 0.5 3.9 37.2−2.9 Example 13 Comparative(Al_(0.20)Cr_(0.50)Si_(0.30))(N_(0.95)O_(0.05)) 0.1 1.2 43.2 −3.8Example 14 Comparative (Al_(0.85)Cr_(0.10)Si_(0.05))(N_(0.95)O_(0.05))0.2 0.7 37.1 −2.6 Example 15 Comparative (Al_(0.5)Cr_(0.5))N 2.9 >5.036.9 −2.6 Example 5 Peeling Elastic Indentation Cemented High-SpeedRecovery Hardness (GPa)⁽⁴⁾ No. Carbide⁽¹⁾ Steel⁽²⁾ Die Steel⁽³⁾ Ratio(%) 1100° C. 1200° C. Example 17 no no no 34.2 50.2 47.2 Example 18 nono no 35.1 51.3 51.6 Example 19 no no no 34.6 48.3 47.0 Example 20 no nono 35.1 49.3 48.2 Example 21 no no no 35.3 50.7 50.1 Comparative no noyes 28.6 36.1 34.5 Example 13 Comparative yes yes yes 30.1 35.2 35.1Example 14 Comparative yes yes yes 30.4 36.2 35.1 Example 15 Comparativeyes yes yes 31.8 35.5 34.5 Example 5 Note: ⁽¹⁾Containing 13.5% by massof Co. ⁽²⁾Produced from high-speed steel powder containing 8% by mass ofCo. ⁽³⁾SKD61. ⁽⁴⁾After heat-treated at 1100° C. and 1200° C.,respectively, for 4 hours in vacuum.

EXAMPLES 22–24, COMPARATIVE EXAMPLES 16–21

Hard films having composition represented by(Al_(x)Cr_(0.95-x)Si_(0.05))(NO) and (Al_(x)Cr_(1-x))N, respectively,were formed under the same film-forming conditions as in Example 10. Inthe hard film of (Al_(x)Cr_(0.95-x)Si_(0.05))(NO), x was 0.2 inComparative Example 16, 0.3 in Comparative Example 17, 0.5 in Example22, 0.6 in Example 23, 0.7 in Example 24, and 0.8 in Comparative Example18. In the hard film of (Al_(x)Cr_(1-x))N, x was 0.2 in ComparativeExample 19, 0.5 in Comparative Example 20, and 0.7 in ComparativeExample 21. The indentation hardness of each hard film was measured inthe same manner as in Examples 17–21. The results are shown in FIG. 12.

The hard films of Examples 22–24 having an Al content in a range of45–75 atomic % had as high hardness as more than 40 GPa because of theinclusion of Si and oxygen. The more preferred hardness is 45–55 GPa.With such high hardness, the hard films have excellent wear resistanceand adhesion to the substrate.

EXAMPLES 25–36, COMPARATIVE EXAMPLES 22–26

A degreased and washed substrate was placed in a vacuum chamber of anarc-discharge ion-plating apparatus, kept at 500° C. for 30 minutes andthen irradiated with Ar ions for cleaning.

With each of an Al_(0.7)Cr_(0.3) alloy target (Examples 25, 26, 29–36,Comparative Examples 22–24) and an Al_(0.68)Cr_(0.27)Si_(0.5) alloytarget (Examples 27, 28) both with an oxygen content of 3200 ppm placedin the vacuum chamber, an N₂ gas and reaction gases selected from a CH₄gas, a C₂H₂ gas, an Ar gas, an O₂ gas, a CO gas and a B₃N₃H₆ gasdepending on the object were introduced into the vacuum chamber, withthe total pressure set at 7.5 Pa. With a pulse bias voltage (negativebias voltage: −120 V, positive bias voltage: +10 V, frequency: 20 kHz,and pulse width: negative pulse to positive pulse =80%: 20%), arcdischarge was applied to each target to form a hard film having athickness of about 3.5 μm on a mirror-polished substrate of SNMN432formed by ultrafine cemented carbide particles containing 7% by mass ofCo at a film-forming temperature of 450° C. The film-forming conditionsof Comparative Examples were the same as in Examples unless otherwisementioned, except that a constant negative bias voltage was applied tothe substrate.

Each of the resultant hard films was analyzed by an electron probemicroanalyzer with respect to composition in a region of 50 μm indiameter. The analysis results are shown in Table 4.

To confirm the presence of oxygen in the hard film, the cross sectionstructure of the hard film was observed by a field emission transmissionelectron microscope (TEM) of a JEM-2010F type available from JEOL. Ltd.at an acceleration voltage of 200 kV. FIG. 13 is a TEM photographshowing the cross section structure of the hard film of Example 25. Inthe TEM photograph of FIG. 13, crystal grains 1, 2 and boundaries wereclearly observed.

The oxygen contents in crystal grains and grain boundaries were analyzedby an electron-beam energy-loss spectroscope of Model 766 available fromGatan. In the electron-beam energy-loss spectroscopy, an analysis regionwas 1 nm in diameter. FIG. 14 shows the analysis results of the crystalgrain 2 in FIG. 13 in a region of 1 nm in diameter by the electron-beamenergy-loss spectroscopy. FIG. 15 shows the analysis results of theboundary (shown by the arrow) in FIG. 13 in a region of 1 nm in diameterby the electron-beam energy-loss spectroscopy.

It was confirmed from FIG. 15 that there was oxygen in the grainboundaries. FIGS. 14 and 15 indicate that oxygen exists more in grainboundaries than in crystal grains in the hard film. To control such thatoxygen exists more in grain boundaries than in crystal grains, theproper film-forming conditions should be selected. In addition, the useof an oxygen-containing metal target is effective.

To detect the bonding state of oxygen in the hard film of Example 25,X-ray photoelectron spectroscopic analysis was carried out at 400 W in acircular region of 0.4 mm in diameter in the film, using an X-rayphotoelectron spectroscope of 1600S type available from PHI, whichcomprised MgKα as an X-ray source. Each test piece for analysis wassufficiently degreased and washed. With an Ar ion gun placed withinclination of 50° to a test piece surface, an X-ray generator wasdisposed at such a position that X-ray impinges the test piece surfaceat 90°, and a photoelectron detector was disposed with inclination of35° relative to the test piece surface. A 10-mm²-region of each testpiece was etched with Ar ions for 120 minutes, and spectrum was measuredevery 24 minutes. A rate of etching with Ar ions was 1.5 nm/min on thebasis of SiO₂.

FIG. 16 shows the spectrum after etching with Ar ions for 120 minutes.It is clear from FIG. 16 that the hard film of Example 25 containedoxygen. FIG. 17 shows the results of element analysis conducted by X-rayphotoelectron spectroscopy in a film thickness direction. It wasconfirmed from FIG. 17 that there was about 6 atomic % of oxygen per thetotal amount (100 atomic %) of non-metal elements in the hard film ofExample 25. FIG. 18 shows the spectra corresponding to O_(1s) measuredevery 24 minutes. In FIG. 18, the outermost surface of the test piece isshown on a rear end, and the deepest portion of the test piece is shownon a front end. It is clear from FIG. 18 that the hard film of Example25 has the binding energy of metals (Al and Cr) and oxygen in a range of525–535 eV. The bonding was mainly between carbon and oxygen on the testpiece surface, while the bonding of metals and oxygen increased as goinginside the film. Table 4 shows the binding energy and bonding state ofoxygen to metals in a range of 525–535 eV in each hard film.

Further, the following characteristics of each hard film were evaluated.

(1) Crystallinity of Hard Film

To evaluate the crystallinity of each hard film, X-ray diffractionmeasurement was conducted with the incidence angle of X-ray to the testpiece surface set at 5°. It was found from the resultant X-raydiffraction profile that the face index of the hard film at the maximumintensity was a (111) face or a (200) face of an NaCl-type crystalstructure. Expressing the X-ray diffraction intensity of the (111) faceas I(111), and the X-ray diffraction intensity of the (200) face asI(200), the half width of 2θ of the face index of each film at themaximum intensity and I(200)/I(111) are shown in Table 4.

(2) Indentation Hardness and Elastic Recovery Ratio

With each mirror-polished hard film inclined by 5°, the indentationhardness of each hard film was measured at a depth of 2–3 μm from thesurface at 10 points by the same nano-indentation method as in Examples17–21. The elastic recovery ratio E was calculated from aload-displacement curve obtained by the measurement of the indentationhardness. Table 4 shows an average value of the hardness of each filmand the elastic recovery ratio E.

(3) Thickness of Oxide Layer

To evaluate the high-temperature oxidation resistance of each hard film,a test piece having each hard film was kept at 1100° C. for 9 hours inthe air, and the thickness of the resultant oxide layer was measured.The results are shown in Table 4.

(4) Adhesion of Hard Film

To evaluate the adhesion of each hard film, the hardness of a test piecehaving each hard film was measured at 1470 N by a Rockwell hardnessmeter, and observation was conducted on whether or not there was peelingin a portion near the dent. The results are shown in Table 4.

(5) Wear Resistance

Each hard film was formed on a four-edge roughing end mill made ofhigh-speed steel having an outer diameter of 12 mm, to measure cuttinglength until the average wear width of a flank reached 0.25 mm, or whenthe tool was broken, thereby evaluating the wear resistance of the hardfilm. The results are shown in Table 4. The cutting conditions were asfollows:

Cutting method: Rough working on side surface, Work: SCM440 (HRC 31),Depth of cutting: 6 mm in a radial direction and 12 mm in an axialdirection, Cutting speed: 70 m/min, Feed: 0.07 mm/edge, and Cutting oil:None (dry type using air blow).

TABLE 4 Face Index Half Width at of 2θ in Maxi- Face Film mum Index atOxygen Composition Inten- Maximum Concen- No. (atomic ratio) sityIntensity(°) tration Example (Al_(0.65)Cr_(0.35)) (111) 0.7 Boundaries >25 (N_(0.96)O_(0.03)C_(0.01)) Crystal Grains Example(Al_(0.65)Cr_(0.35)) (111) 0.9 Boundaries > 26(N_(0.96)O_(0.03)C_(0.01)) Crystal Grains Example(Al_(0.65)Cr_(0.31)Si_(0.04)) (200) 0.8 Boundaries > 27(N_(0.95)O_(0.05)) Crystal Grains Example (Al_(0.65)Cr_(0.31)Si_(0.04))(200) 1.2 Boundaries > 28 (N_(0.95)O_(0.05)) Crystal Grains Example(Al_(0.65)Cr_(0.35)) (111) 1.1 Boundaries > 29 (N_(0.97)O_(0.03))Crystal Grains Example (Al_(0.65)Cr_(0.35)) (111) 1.2 Boundaries > 30(N_(0.99)O_(0.01)) Crystal Grains Example (Al_(0.65)Cr_(0.35)) (200) 0.9Boundaries > 31 (N_(0.92)O_(0.03)B_(0.05)) Crystal Grains Example(Al_(0.65)Cr_(0.35)) (111) 0.7 Boundaries > 32 (N_(0.99)O_(0.01))Crystal Grains Example (Al_(0.65)Cr_(0.35)) (111) 0.8 Boundaries > 33(N_(0.99)O_(0.01)) Crystal Grains Example (Al_(0.65)Cr_(0.35)) (111) 0.8Boundaries > 34 (N_(0.99)O_(0.01)) Crystal Grains Example(Al_(0.65)Cr_(0.35)) (111) 0.7 Boundaries > 35 (N_(0.99)O_(0.01))Crystal Grains Example (Al_(0.65)Cr_(0.35)) (111) 1.3 Boundaries > 36(N_(0.99)O_(0.01)) Crystal Grains Comp- (Al_(0.65)Cr_(0.35)) (111) 0.9Boundaries = arative (N_(0.97)O_(0.02)C_(0.01)) Crystal Grains Example22 Comp- (Al_(0.65)Cr_(0.35)) (111) 0.3 Boundaries ≦ arative(N_(0.98)O_(0.01)C_(0.01)) Crystal Grains Example 23 Comp-(Al_(0.65)Cr_(0.35)) (111) 2.1 Boundaries ≦ arative(N_(0.98)O_(0.01)C_(0.01)) Crystal Grains Example 24 Comp-(Al_(0.50)Ti_(0.50))N (200) 0.4 Boundaries = arative Crystal GrainsExample 25 Comp- (Al_(0.50)Cr_(0.50))N (111) 0.7 Boundaries = arativeCrystal Grains Example 26 Oxygen Peak of Oxygen No. Bonding⁽¹⁾Concentration⁽²⁾ I(200)/I(111) Example 25 Al—O, Cr—O yes 0.8 Example 26Al—O, Cr—O yes 0.8 Example 27 Al—O, Cr—O, Si—O yes 1.8 Example 28 Al—O,Cr—O, Si—O yes 2.2 Example 29 Al—O, Cr—O yes 0.8 Example 30 Al—O, Cr—Oyes 0.9 Example 31 Al—O, Cr—O yes 1.4 Example 32 — no 0.7 Example 33Al—O, Cr—O yes 15 Example 34 Al—O, Cr—O yes 0.9 Example 35 Al—O, Cr—Oyes 0.8 Example 36 Al—O, Cr—O yes 0.4 Comparative Al—O, Cr—O yes 0.6Example 22 Comparative Al—O, Cr—O yes 0.4 Example 23 Comparative Al—O,Cr—O yes 0.9 Example 24 Comparative — no 12 Example 25 Comparative — no0.9 Example 26 Note: ⁽¹⁾Oxygen bonding in a range of 525–535 eV. ⁽²⁾Thepeak of the oxygen concentration in a region 500 nm deep from a surface.Thickness of Hardness Oxide Layer Cutting No. E(%) (GPa) (μm) PeelingLength (m) Example 25 31 48 0.6 no 63 Example 26 32 49 0.6 no 62 Example27 33 52 0.3 no 74 Example 28 34 53 0.3 no 78 Example 29 31 49 0.5 no 61Example 30 32 47 0.6 no 61 Example 31 33 51 0.2 no 72 Example 32 30 440.7 no 36 Example 33 30 43 0.9 no 43 Example 34 27 42 0.9 no 45 Example35⁽¹⁾ 31 48 0.2 no 79 Example 36⁽²⁾ 28 42 0.7 no 45 Comparative 29 361.5 yes 23 Example 22⁽³⁾ Comparative 28 35 1.2 yes 25 Example 23Comparative 28 35 1.2 yes 14 Example 24 Comparative 27 38 5 or more yes20 Example 25 Comparative 27 36 5 or more yes 21 Example 26 Note: ⁽¹⁾Theoxygen concentration was the maximum on the outermost surface. ⁽²⁾Hcpphase detected. ⁽³⁾At a reaction gas pressure of 0.3 Pa.

It was confirmed from Table 4 that the oxygen concentration was higherin grain boundaries than in crystal grains in any of Examples 25–36.Examples 25–36 provided higher hardness and better adhesion thanComparative Examples 22–26. The half width of 2θ at a face index at themaximum intensity in X-ray diffraction was in a range of 0.5–2° inExamples 25–36, while it was 0.3° in Comparative Example 23 and 2.1° inComparative Example 24. Accordingly, the hard films of ComparativeExamples 23 and 24 had low hardness and thus poor adhesion. With respectto the high-temperature oxidation resistance, oxidation proceeded slowlyin Examples 25–36.

As is clear from Table 4, the hard films of Examples 25–36 had longercutting life and better wear resistance than those of ComparativeExamples 22–26. Particularly, the hard films of AlCrSiNO of Examples 27and 28 had a long cutting life and thus excellent wear resistance.

The hard film of AlCrNOB of Example 31 had excellent wear resistancebecause of the inclusion of B.

Rather than Example 32, in which the bonding of oxygen was not clearlyobserved in a range of 525–535 eV, other Examples, in which the bondingof oxygen was clearly observed, had higher hardness, longer cuttinglength and better wear resistance.

Rather than Example 33, in which a ratio of I(200)/I(111) was 15, otherExamples meeting the conditions of 0.3<I(200)/I(111)<12 had higherhardness, longer cutting life and better wear resistance.

Rather than Example 34, in which the elastic recovery ratio E determinedby a nano-indentation method was 27, other Examples meeting theconditions of 28≦E≦42, had higher hardness, higher adhesion, longercutting length and better wear resistance.

Example 35 having the peak of the oxygen concentration at a depth within500 nm from the surface had an excellent high-temperature oxidationresistance and the longest cutting life.

Rather than the hard film of Example 36 having a hexagonal crystal(considered to be AlN) in addition to an NaCl-type crystal structure inX-ray diffraction, the hard films of other Examples having only an NaClstructure had higher hardness, longer cutting life and better wearresistance.

In Comparative Example 22, in which a hard film was formed at a reactiongas pressure of 0.3 Pa, there was no difference in the oxygenconcentration observed between crystal grains and grain boundaries,resulting in insufficient hardness and adhesion. Accordingly, the wearresistance was not improved, and the life was short.

In Comparative Examples 23 and 24, in which the halfwidth of 2θ was 0.3°and 2.1°, respectively, the hardness and the adhesion were notsufficiently improved, failing to improve the wear resistance andresulting in short life.

EXAMPLES 37–53, COMPARATIVE EXAMPLES 27 AND 28

The same tools as in Examples 25–36 were coated with hard films shown inTable 5 and then with additional films shown in Table 5 in a thicknessof about 1 μm, to conduct a cutting test under the same conditions as inExamples 25–36. The film composition of each tool and the maximum lifeare shown in Table 5.

TABLE 5 Composition (atomic ratio) Cutting No. Hard Film Additional FilmLength (m) Example 37 (Al_(0.65)Cr_(0.35))(N_(0.97)O_(0.03))(Al_(0.75)Si_(0.25))(N_(0.97)O_(0.03)) 72 Example 38(Al_(0.65)Cr_(0.35))(N_(0.97)O_(0.03))(Cr_(0.97)Si_(0.03))(N_(0.97)B_(0.03)) 75 Example 39(Al_(0.65)Cr_(0.35))(N_(0.97)O_(0.03)) (Ti_(0.78)Si_(0.22))N 89 Example40 (Al_(0.65)Cr_(0.35))(N_(0.97)O_(0.03)) Hard Carbon 82 Example 41(Al_(0.65)Cr_(0.35))(N_(0.97)O_(0.03)) Boron Nitride 91 Example 42(Al_(0.65)Cr_(0.35))(N_(0.97)O_(0.03)) Ti(N_(0.97)B_(0.03)) 93 Example43 (Al_(0.65)Cr_(0.35))(N_(0.92)O_(0.03)B_(0.05)) Ti(N_(0.88)B_(0.12))95 Example 44 (Al_(0.65)Cr_(0.31)Si_(0.04))(N_(0.95)O_(0.05))(Al_(0.75)Si_(0.25))(N_(0.97)O_(0.03)) 82 Example 45(Al_(0.65)Cr_(0.31)Si_(0.04))(N_(0.95)O_(0.05))(Cr_(0.97)Si_(0.03))(N_(0.97)B_(0.03)) 86 Example 46(Al_(0.65)Cr_(0.31)Si_(0.04))(N_(0.95)O_(0.05)) (Ti_(0.78)Si_(0.22))N 98Example 47 (Al_(0.65)Cr_(0.31)Si_(0.04))(N_(0.95)O_(0.05)) Hard Carbon102 Example 48 (Al_(0.65)Cr_(0.31)Si_(0.04))(N_(0.95)O_(0.05)) BoronNitride 111 Example 49 (Al_(0.65)Cr_(0.31)Si_(0.04))(N_(0.95)O_(0.05))Ti(N_(0.97)B_(0.03)) 104 Example 50(Al_(0.65)Cr_(0.31)Si_(0.04))(N_(0.95)O_(0.05)) Ti(N_(0.88)B_(0.12)) 107Example 51⁽¹⁾ (Al_(0.65)Cr_(0.31)Si_(0.04))(N_(0.95)O_(0.05))(Cr_(0.97)Si_(0.03))(N_(0.97)B_(0.03)) 92 Example 52⁽¹⁾(Al_(0.65)Cr_(0.31)Si_(0.04))(N_(0.95)O_(0.05)) (Ti_(0.78)Si_(0.22))N118 Example 53⁽¹⁾ (Al_(0.65)Cr_(0.31)Si_(0.04))(N_(0.95)O_(0.05))Ti(N_(0.88)B_(0.12)) 121 Comparative(Al_(0.65)Cr_(0.35))(N_(0.97)O_(0.03)) (Ti_(0.78)Zr_(0.22))N 75 Example27 Comparative (Al_(0.65)Cr_(0.35))(N_(0.97)O_(0.03))(V_(0.75)Zr_(0.25))N 67 Example 28 Note: ⁽¹⁾Surface smoothed.

Examples 37–42 each having an additional film shown in Table 5immediately on the hard film of Example 29 were longer in cutting lengthand better in wear resistance than the hard film of Example 29. Example43 having an additional film shown in Table 5 immediately on the hardfilm of Example 31 was longer in cutting life and better in wearresistance than Example 31. Examples 44–50 each having an additionalfilm shown in Table 5 immediately on the hard film of Example 27 werelonger in cutting length and better in wear resistance than Example 27.The tools of Examples 51–53 obtained by smoothing the film surfaces ofExamples 45, 46 and 50 by mechanical working had as long life as 1.2times at maximum. The films of TiZrN and VZrN in Comparative Examples 27and 28 had poor adhesion to the hard film of the present invention,failing to further improve the wear resistance. It is thus clear thatthe formation of at least one of a hard film comprising at least onemetal selected from the group consisting of Ti, Cr, Al and Si, and N andat least one non-metal element of C, O and/or B, a hard carbon film, anda boron nitride film immediately on the hard film of the presentinvention is preferable for increasing the tool life.

Though the present invention has been explained in detail referring toExamples above, the present invention is not restricted thereto, andvarious modifications may be made within the scope of the concept of thepresent invention. For instance, part of the metal components (less than4 atomic %) may be replaced by one or more metals in 4 a, 5 aand 6 agroups in the hard film.

As described above in detail, with oxygen or oxygen and Si added to thehard film of AlCrN, the hard film can be provided with improvedhardness, adhesion, wear resistance and high-temperature oxidationresistance. When such hard films are formed on cutting tools andwear-resistant tools such as end mills, drills, etc., the cutting lifecan be extremely improved. With these improvements, the production costof members requiring the above characteristics is drastically reduced.

1. A hard film formed by an arc-discharge ion-plating method, having acomposition comprising metal components represented by Al_(x)Cr_(1-x),wherein x is an atomic ratio meeting 0.45≦x≦0.75, and non-metalcomponents represented by N_(1-α-β-γ)B_(α)C_(β)O_(γ), wherein α, β and γare respectively atomic ratios meeting 0≦α≦0.15, 0≦β≦0.35, and0.01≦γ≦0.25; said hard film having the maximum X-ray diffractionintensity in a (200) face or a (111) face, and the binding energy of Aland/or Cr to oxygen in a range of 525–535 eV in an X-ray photoelectronspectroscopy.
 2. The hard film according to claim 1, wherein its elasticrecovery ratio E determined by a nano-indentation method is 28–42%. 3.The hard film according to claim 1, wherein it has a surface smoothed bymechanical working.
 4. The hard film according to claim 1, wherein aratio of said non-metal components to said metal components is 1.1 ormore.
 5. A hard film formed by an arc-discharge ion-plating method,having a composition comprising metal components represented byAl_(x)Cr_(l-x-y)Si_(y), wherein x and y are respectively atomic ratiosmeeting 0.45≦x≦0.75, and 0<y≦0.35, and non-metal components representedby N_(1-α-β-γ)B_(α)C_(β)O_(γ), wherein α, β and γ are respectivelyatomic ratios meeting 0≦α≦0.15, 0≦β≦0.35, and γ≦0.25; said hard filmhaving the binding energy of Al, Cr and/or Si to oxygen in a range of525–535 eV in an X-ray photoelectron spectroscopy.
 6. The hard filmaccording to claim 5, wherein Si exists in the form of a nitride, anoxide and a metal, and wherein when the relative intensities of the Simetal and its nitride and oxide determined by X-ray photoelectronspectroscopy are represented by I(Si), I(Si—N) and I(Si—O),respectively, with I(Si)+I(Si—N)+I(Si—O)=100%, I(Si—N) is 52% or more.7. The hard film according to claim 5, wherein it has a crystalstructure having the maximum X-ray diffraction intensity in a (200) faceor a (111) face.
 8. The hard film according to claim 5, wherein itselastic recovery ratio E determined by a nano-indentation method is28–42%.
 9. The hard film according to claim 5, wherein it has a surfacesmoothed by mechanical working.
 10. The hard film according to claim 5,wherein a ratio of said non-metal components to said metal components is1.1 or more.
 11. A hard film formed by an arc-discharge ion-platingmethod, having a composition comprising metal components represented byAl_(x)Cr_(1-x-y)Si_(y), wherein x and y are respectively atomic ratiosmeeting 0.45≦x≦0.75, 0≦y≦0.35, and 0.5≦x+y<1, and non-metal componentsrepresented by N_(1-α-β-γ)B_(α)C_(β)O_(γ), wherein α, β and γ arerespectively atomic ratios meeting 0≦α≦0.15, 0≦β≦0.35, and 0.003≦γ≦0.25;said hard film having an NaCl-type crystal structure in an X-raydiffraction, with a half width of 2θ at a diffraction peak correspondingto a (111) face or a (200) face being 0.5–2.0°; and said hard filmcontaining oxygen more in grain boundaries than in crystal grains. 12.The hard film according to claim 11, wherein said hard film has thebinding energy of Al, Cr and/or Si to oxygen in a range of 525–535 eV inan X-ray photoelectron spectroscopy.
 13. The hard film according toclaim 11, wherein said hard film has the maximum oxygen concentration ina region of depth within 500 nm from the outermost surface.
 14. The hardfilm according to claim 11, wherein it meets 0.3<I(200)/I(111)<12,wherein I(111) and I(200) are the X-ray diffraction intensities of a(111) face and a (200) face, respectively.
 15. The hard film accordingto claim 11, wherein its elastic recovery ratio E determined by anano-indentation method is 28–42%.
 16. The hard film according to claim11, wherein it has a surface smoothed by mechanical working.
 17. Thehard film according to claim 11, wherein a ratio of said non-metalcomponents to said metal components is 1.1 or more.